 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet IXFH 66N20Q IXFT 66N20Q VDSS ID25 RDS(on) = 200 V = 66 A = 40 m trr 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 200 200 30 40 66 264 66 40 1.5 20 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C TO-268 (D3) (IXFT) Case Style G S (TAB) TO-247 AD (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-268 300 Features IXYS advanced low Qg process International standard packages Low gate charge and capacitance - easier to drive - faster switching Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 200 2.0 4.0 100 25 1 40 V V nA A mA m Advantages Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2003 IXYS All rights reserved DS99039(04/03) IXFH 66N20Q IXFT 66N20Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 30 45 3700 VGS = 0 V, VDS = 25 V, f = 1 MHz 860 260 20 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2.0 (External) 18 50 14 105 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 44 0.31 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 66 264 1.5 200 A A V ns C A Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s, VR = 100 V 0.6 7 Min. Recommended Footprint Dimensions in mm and inches IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFH 66N20Q IXFT 66N20Q Fig. 1. Output Characteristics @ 25 Deg. C 70 60 50 40 30 20 1 0 0 0 0.5 1 VG S = 10V 7V 6V 1 80 1 50 VG S = 10V 8V 7V Fig. 2. Extended Output Characteristics @ 25 deg. C I D - Amperes I D - Amperes 1 20 90 60 30 0 6V 5V 5V V DS - Volts 1 .5 2 2.5 3 3.5 0 3 6 9 1 2 1 5 V D S - Volts Fig. 3. Output Characteristics @ 125 Deg. C 70 60 VG S = 10V 7V Fig. 4. RDS(on) Normalized to ID25 Value vs. Junction Temperature 2.8 2.5 VG S = 10V RD S (on) - Normalized 6V I D - Amperes 50 40 30 20 1 0 0 0 1 2 3 4 5 6 7 5V 2.2 1 .9 1 .6 1 .3 1 0.7 0.4 -50 -25 0 25 50 75 1 00 1 25 1 50 I D = 66A I D = 33A V DS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D25 Value vs. ID 3.5 3 VG S = 10V 70 60 Fig. 6. Drain Current vs. Case Temperature RD S (on) - Normalized I D - Amperes 2.5 2 1 .5 1 0.5 0 33 66 99 1 32 1 65 T J = 25 C T J = 125 C 50 40 30 20 1 0 0 -50 -25 0 25 50 75 1 00 1 25 1 50 I D - Amperes TC - Degrees Centigrade (c) 2003 IXYS All rights reserved IXFH 66N20Q IXFT 66N20Q Fig. 7. Input Admittance 1 65 90 80 1 32 70 T J = -40 C 25 C 125 C Fig. 8. Transconductance g f s - Siemens I D - Amperes 60 50 40 30 20 1 0 0 99 66 T J = -40 C 25 C 125 C 33 0 3 3.5 4 4.5 5 5.5 6 6.5 7 0 33 66 99 132 1 65 V G S - Volts I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 1 98 1 65 1 0 Fig. 10. Gate Charge VD S = 100V I D = 33A I G = 10mA 8 I S - Amperes VG S - Volts T J = 25 C 1 32 99 66 33 0 0.4 0.6 0.8 1 1 .2 1 .4 T J = 125 C 6 4 2 0 0 20 40 60 80 1 00 1 20 V SD - Volts QG - nanoCoulombs Fig. 11. Capacitance 1 0000 f = 1M Hz 1 Fig. 12. Maximum Transient Thermal Resistance Capacitance - p F R (th) J C - (C/W) 30 35 40 C iss 1 000 C oss 0.1 C rss 1 00 0 5 1 0 1 5 0.01 20 25 V DS - Volts 1 Pulse Width - milliseconds 1 0 1 00 1 000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 |
Price & Availability of IXFT66N20Q
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |